Suppressed diffusion of boron and carbon in carbon-rich silicon
- authored by
- H. Rücker, B. Heinemann, W. Röpke, R. Kurps, D. Krüger, G. Lippert, H. J. Osten
- Abstract
Transient enhanced diffusion of boron in silicon can be suppressed by substitutional carbon. We show here that diffusion of boron and carbon is strongly reduced in carbon-rich silicon, even when no supersaturation of interstitials due to implantation is present. Pronounced non-Fickian diffusion behavior was found for epitaxially grown-in carbon at concentrations well above its solid solubility. The experimentally observed suppression of B and C diffusion at high C concentrations is explained in terms of a recently proposed model that predicts an undersaturation of Si self-interstitials caused by diffusion of C out of C-rich regions.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Article
- Journal
- Applied physics letters
- Volume
- 73
- Pages
- 1682-1684
- No. of pages
- 3
- ISSN
- 0003-6951
- Publication date
- 21.09.1998
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic version(s)
-
https://doi.org/10.1063/1.122244 (Access:
Closed)
