Suppressed diffusion of boron and carbon in carbon-rich silicon

verfasst von

H. Rücker, B. Heinemann, W. Röpke, R. Kurps, D. Krüger, G. Lippert, H. J. Osten

Abstract

Transient enhanced diffusion of boron in silicon can be suppressed by substitutional carbon. We show here that diffusion of boron and carbon is strongly reduced in carbon-rich silicon, even when no supersaturation of interstitials due to implantation is present. Pronounced non-Fickian diffusion behavior was found for epitaxially grown-in carbon at concentrations well above its solid solubility. The experimentally observed suppression of B and C diffusion at high C concentrations is explained in terms of a recently proposed model that predicts an undersaturation of Si self-interstitials caused by diffusion of C out of C-rich regions.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Applied physics letters

Band

73

Seiten

1682-1684

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

21.09.1998

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.122244 (Zugang: Geschlossen)