Modelling of silicon molecular beam epitaxy on Si(100)

authored by

H. J. Osten

Abstract

A model for Si(100) molecular beam epitaxy (MBE) based on Monte Carlo simulations is applied in order to study the influence of different parameters (substrate temperature, molecular flux density) on the growth kinetics by monitoring the step density of the simulated growth front. The existence of a minimum temperature for smooth two-dimensional film growth with a low step density is discussed. It is shown that such a temperature does not result from the model used. For a sufficiently low deposition rate smooth two-dimensional growth should be possible even at room temperature. The calculations yield an optimal temperature range for growth of low step density films which is in agreement with experimental findings for MBE growth of good quality crystalline layers.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

THIN SOLID FILMS

Volume

215

Pages

14-18

No. of pages

5

ISSN

0040-6090

Publication date

30.07.1992

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Surfaces and Interfaces, Surfaces, Coatings and Films, Metals and Alloys, Materials Chemistry

Electronic version(s)

https://doi.org/10.1016/0040-6090(92)90694-7 (Access: Closed)