Modelling of silicon molecular beam epitaxy on Si(100)

verfasst von

H. J. Osten

Abstract

A model for Si(100) molecular beam epitaxy (MBE) based on Monte Carlo simulations is applied in order to study the influence of different parameters (substrate temperature, molecular flux density) on the growth kinetics by monitoring the step density of the simulated growth front. The existence of a minimum temperature for smooth two-dimensional film growth with a low step density is discussed. It is shown that such a temperature does not result from the model used. For a sufficiently low deposition rate smooth two-dimensional growth should be possible even at room temperature. The calculations yield an optimal temperature range for growth of low step density films which is in agreement with experimental findings for MBE growth of good quality crystalline layers.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

THIN SOLID FILMS

Band

215

Seiten

14-18

Anzahl der Seiten

5

ISSN

0040-6090

Publikationsdatum

30.07.1992

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Oberflächen und Grenzflächen, Oberflächen, Beschichtungen und Folien, Metalle und Legierungen, Werkstoffchemie

Elektronische Version(en)

https://doi.org/10.1016/0040-6090(92)90694-7 (Zugang: Geschlossen)