Transport characterization of in-plane gate devices fabricated by direct epitaxial growth on patterned substrates
- authored by
- M. Dilger, R. J. Haug, K. Eberl, A. Kurtenbach, Y. Kershaw, K. V. Klitzing
- Abstract
Direct molecular-beam epitaxial growth of GaAs/AlxGa1-xAs heterostructures on bow-tie shaped constrictions, prepatterned on GaAs substrates is used to fabricate in-plane gate transistors. The fabricated devices can be tuned by applying voltages to in-plane gates, which are also realized during the epitaxial growth. In this way, complete in-plane gate transistors are fabricated in a single growth process. Transport measurements of the devices at 1.3 K show conductance quantization or Coulomb blockade depending on the width of the constriction. The Coulomb blockade effect in the narrowest structures is caused by the formation of a self-assembled quantum dot in the center of the constriction.
- External Organisation(s)
-
Max Planck Institute for Solid State Research (MPI-FKF)
- Type
- Article
- Journal
- Applied physics letters
- Volume
- 68
- Pages
- 3132-3134
- No. of pages
- 3
- ISSN
- 0003-6951
- Publication date
- 01.12.1996
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic version(s)
-
https://doi.org/10.1063/1.115801 (Access:
Unknown)
