Transport characterization of in-plane gate devices fabricated by direct epitaxial growth on patterned substrates

verfasst von

M. Dilger, R. J. Haug, K. Eberl, A. Kurtenbach, Y. Kershaw, K. V. Klitzing

Abstract

Direct molecular-beam epitaxial growth of GaAs/AlxGa1-xAs heterostructures on bow-tie shaped constrictions, prepatterned on GaAs substrates is used to fabricate in-plane gate transistors. The fabricated devices can be tuned by applying voltages to in-plane gates, which are also realized during the epitaxial growth. In this way, complete in-plane gate transistors are fabricated in a single growth process. Transport measurements of the devices at 1.3 K show conductance quantization or Coulomb blockade depending on the width of the constriction. The Coulomb blockade effect in the narrowest structures is caused by the formation of a self-assembled quantum dot in the center of the constriction.

Externe Organisation(en)

Max-Planck-Institut für Festkörperforschung

Typ

Artikel

Journal

Applied physics letters

Band

68

Seiten

3132-3134

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

01.12.1996

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.115801 (Zugang: Unbekannt)