Proceedings of the 1995 E-MRS Spring Meeting
- authored by
- H. J. Osten
- Abstract
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Contribution to book/anthology
- Pages
- [d]294p
- Publication date
- 01.1996
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Materials Science, Condensed Matter Physics, Mechanics of Materials, Mechanical Engineering
