Proceedings of the 1995 E-MRS Spring Meeting

verfasst von

H. J. Osten

Abstract

The growth and properties of Si_1-yC_y and Si_1-x-yGe_xC_y alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si_1-x-yGe_xC_y layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Beitrag in Buch/Sammelwerk

Seiten

[d]294p

Publikationsdatum

01.1996

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Materialwissenschaften, Physik der kondensierten Materie, Werkstoffmechanik, Maschinenbau