Tunnelling through quantum dots

authored by

R. H. Blick, T. Schmidt, R. Haug, K. Von Klitzing

Abstract

Tunnelling through single and coupled GaAs quantum dots is used to analyse the electronic properties of artificial atoms and molecules. In addition we demonstrate that a strongly localized dot can be used as a spectrometer with high spatial and energy resolution for the determination of the local density of states in a disordered semiconductor.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)

Type

Article

Journal

Semiconductor Science and Technology

Volume

11

Pages

1506-1511

No. of pages

6

ISSN

0268-1242

Publication date

11.1996

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

Electronic version(s)

https://doi.org/10.1088/0268-1242/11/11S/009 (Access: Unknown)