Efficiency of photoluminescence up-conversion at (Al_0.5Ga_0.5)_0.5In_0.5P and GaAs heterointerface

authored by

Kenichi Yamashita, Takashi Kita, Taneo Nishino, Michael Oestreich

Abstract

Up-converted photoluminescence (UPL) signal of long-range ordered (Al_0.5Ga_0.5)_0.5In_0.5P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states.

External Organisation(s)

Kobe University

Type

Conference contribution

Pages

521-524

No. of pages

4

Publication date

1998

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering