Efficiency of photoluminescence up-conversion at (Al_0.5Ga_0.5)_0.5In_0.5P and GaAs heterointerface

verfasst von

Kenichi Yamashita, Takashi Kita, Taneo Nishino, Michael Oestreich

Abstract

Up-converted photoluminescence (UPL) signal of long-range ordered (Al_0.5Ga_0.5)_0.5In_0.5P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states.

Externe Organisation(en)

Kobe University

Typ

Aufsatz in Konferenzband

Seiten

521-524

Anzahl der Seiten

4

Publikationsdatum

1998

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Elektrotechnik und Elektronik