Local structure of strain-compensated epitaxial Si_1−x−yGe_xC_y layers on Si(001) grown with molecular beam epitaxy

authored by

H. J. Osten, B. Dietrich, H. Rücker, M. Methfessel

Abstract

We show that it is possible to adjust the strain in pseudomorphic SiGe layers on Si(001) by adding small amounts of carbon. A strain-free Si_1−x−yGe_xC_y layer can be grown on Si(001) by choosing the concentrations x and y such that the volume changes due to the germanium and carbon atoms compensate. The local atomic structure and lattice dynamics of a strain-compensated layer are studied. Experimental and theoretical results are compatible with Vegard's rule. To handle the large bond length distortion near C atoms properly, the used valence-force field model includes anharmonic effects via bond length dependent interatomic force constants which were determined from ab initio density-functional calculations. The dependence of Raman spectra on strain and composition of Si_1−x−yGe_xC_y layers can be explained by the model calculations.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

Journal of crystal growth

Volume

150

Pages

931-933

No. of pages

3

ISSN

0022-0248

Publication date

01.05.1995

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Condensed Matter Physics, Inorganic Chemistry, Materials Chemistry

Electronic version(s)

https://doi.org/10.1016/0022-0248(95)80076-O (Access: Closed)