Local structure of strain-compensated epitaxial Si_1−x−yGe_xC_y layers on Si(001) grown with molecular beam epitaxy

verfasst von

H. J. Osten, B. Dietrich, H. Rücker, M. Methfessel

Abstract

We show that it is possible to adjust the strain in pseudomorphic SiGe layers on Si(001) by adding small amounts of carbon. A strain-free Si_1−x−yGe_xC_y layer can be grown on Si(001) by choosing the concentrations x and y such that the volume changes due to the germanium and carbon atoms compensate. The local atomic structure and lattice dynamics of a strain-compensated layer are studied. Experimental and theoretical results are compatible with Vegard's rule. To handle the large bond length distortion near C atoms properly, the used valence-force field model includes anharmonic effects via bond length dependent interatomic force constants which were determined from ab initio density-functional calculations. The dependence of Raman spectra on strain and composition of Si_1−x−yGe_xC_y layers can be explained by the model calculations.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Journal of crystal growth

Band

150

Seiten

931-933

Anzahl der Seiten

3

ISSN

0022-0248

Publikationsdatum

01.05.1995

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie

Elektronische Version(en)

https://doi.org/10.1016/0022-0248(95)80076-O (Zugang: Geschlossen)