Temperature and density dependence of the electron Landé g factor in semiconductors
- authored by
- Michael Oestreich, S. Hallstein, A. Heberle, K. Eberl, E. Bauser, Wolfgang W. Rühle
- Abstract
The temperature and density dependence of spin quantum beats of electrons is measured by time-resolved photoluminescence spectroscopy and yields the electron Landé g factor in bulk GaAs, InP, and CdTe. In GaAs the g factor increases linearly from -0.44 at 4 K to -0.30 at 280 K; in InP the g factor is 1.20 at 4 K, exhibiting a very small temperature dependence up to 160 K, and in CdTe the g factor follows between T=4 K and 240 K the empirical equation g=-1.653+4×(Formula presented) T+2.8×(Formula presented). In GaAs we demonstrate the suppression of spin quantum beats due to Fermi blocking in a degenerate electron gas and measure an increase of the GaAs g factor from -0.44 at densities below 1×(Formula presented) to -0.33 at (Formula presented).
- External Organisation(s)
-
Max Planck Institute for Solid State Research (MPI-FKF)
University of Cambridge
University of California at Santa Barbara
- Type
- Article
- Journal
- Physical Review B - Condensed Matter and Materials Physics
- Volume
- 53
- Pages
- 7911-7916
- No. of pages
- 6
- ISSN
- 1098-0121
- Publication date
- 15.03.1996
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Condensed Matter Physics
- Electronic version(s)
-
https://doi.org/10.1103/PhysRevB.53.7911 (Access:
Unknown)
