Temperature and density dependence of the electron Landé g factor in semiconductors

verfasst von

Michael Oestreich, S. Hallstein, A. Heberle, K. Eberl, E. Bauser, Wolfgang W. Rühle

Abstract

The temperature and density dependence of spin quantum beats of electrons is measured by time-resolved photoluminescence spectroscopy and yields the electron Landé g factor in bulk GaAs, InP, and CdTe. In GaAs the g factor increases linearly from -0.44 at 4 K to -0.30 at 280 K; in InP the g factor is 1.20 at 4 K, exhibiting a very small temperature dependence up to 160 K, and in CdTe the g factor follows between T=4 K and 240 K the empirical equation g=-1.653+4×(Formula presented) T+2.8×(Formula presented). In GaAs we demonstrate the suppression of spin quantum beats due to Fermi blocking in a degenerate electron gas and measure an increase of the GaAs g factor from -0.44 at densities below 1×(Formula presented) to -0.33 at (Formula presented).

Externe Organisation(en)

Max-Planck-Institut für Festkörperforschung
University of Cambridge
University of California at Santa Barbara

Typ

Artikel

Journal

Physical Review B - Condensed Matter and Materials Physics

Band

53

Seiten

7911-7916

Anzahl der Seiten

6

ISSN

1098-0121

Publikationsdatum

15.03.1996

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie

Elektronische Version(en)

https://doi.org/10.1103/PhysRevB.53.7911 (Zugang: Unbekannt)