Van der Waals epitaxy of thick Sb, Ge, and Ge/Sb films on mica

authored by

H. J. Osten, J. Klatt, G. Lippert

Abstract

We attempt to grow 20-nm-thick layers of Sb and Ge as well as periods of (20 nm Sb/20 nm Ge) layers on muscovite (a special form of mica) by van der Waals epitaxy under different growth conditions. The growth process was in situ investigated by reflection high-energy electron diffraction and Auger electron spectroscopy. Epitaxial Sb layers could be obtained even at cold substrates (mica or polycrystalline Ge layers). It was not possible to grow monocrystalline Ge layers by van der Waals epitaxy. Only a formation of oriented Ge grains could be observed at higher temperatures.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

Applied physics letters

Volume

60

Pages

44-46

No. of pages

3

ISSN

0003-6951

Publication date

06.01.1992

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Electronic version(s)

https://doi.org/10.1063/1.107367 (Access: Closed)