Van der Waals epitaxy of thick Sb, Ge, and Ge/Sb films on mica

verfasst von

H. J. Osten, J. Klatt, G. Lippert

Abstract

We attempt to grow 20-nm-thick layers of Sb and Ge as well as periods of (20 nm Sb/20 nm Ge) layers on muscovite (a special form of mica) by van der Waals epitaxy under different growth conditions. The growth process was in situ investigated by reflection high-energy electron diffraction and Auger electron spectroscopy. Epitaxial Sb layers could be obtained even at cold substrates (mica or polycrystalline Ge layers). It was not possible to grow monocrystalline Ge layers by van der Waals epitaxy. Only a formation of oriented Ge grains could be observed at higher temperatures.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Applied physics letters

Band

60

Seiten

44-46

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

06.01.1992

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.107367 (Zugang: Geschlossen)