Backscattering analysis of Si_1-yC_y layers using the ¹²C(⁴He,⁴He) ¹²C resonance at 4.265 MeV

authored by

D. Endisch, H. J. Osten, P. Zaumseil, M. Zinke-Allmang

Abstract

Resonant backscattering of ⁴He ions using the ¹²C(⁴He,⁴He) ¹²C resonance at 4.265 MeV has been used to analyze C in MBE grown Si_1-yC_y layers and in ion implanted Si with C concentrations of the order of one at.%. With ion channeling the ratio of substitutional to interstitial C sites in the Si_1-yC_y layers was determined and the obtained values for the tetragonal distortion are compared with results from X-ray diffraction measurements. The measured C amount of an ion implanted sample used for calibration was in good agreement with the nominal amount, while the range distribution was about 15% shallower than predicted by TRIM calculations. Strong deviations from the Rutherford scattering cross section are observed for scattering from Si and the influence due to background from nuclear reactions with Si on the C analysis is discussed.

External Organisation(s)

Western University
Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

Nuclear Inst. and Methods in Physics Research, B

Volume

100

Pages

125-132

No. of pages

8

ISSN

0168-583X

Publication date

01.05.1995

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics, Instrumentation

Electronic version(s)

https://doi.org/10.1016/0168-583X(95)00259-6 (Access: Closed)