Backscattering analysis of Si_1-yC_y layers using the ¹²C(⁴He,⁴He) ¹²C resonance at 4.265 MeV

verfasst von

D. Endisch, H. J. Osten, P. Zaumseil, M. Zinke-Allmang

Abstract

Resonant backscattering of ⁴He ions using the ¹²C(⁴He,⁴He) ¹²C resonance at 4.265 MeV has been used to analyze C in MBE grown Si_1-yC_y layers and in ion implanted Si with C concentrations of the order of one at.%. With ion channeling the ratio of substitutional to interstitial C sites in the Si_1-yC_y layers was determined and the obtained values for the tetragonal distortion are compared with results from X-ray diffraction measurements. The measured C amount of an ion implanted sample used for calibration was in good agreement with the nominal amount, while the range distribution was about 15% shallower than predicted by TRIM calculations. Strong deviations from the Rutherford scattering cross section are observed for scattering from Si and the influence due to background from nuclear reactions with Si on the C analysis is discussed.

Externe Organisation(en)

Western University
Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Nuclear Inst. and Methods in Physics Research, B

Band

100

Seiten

125-132

Anzahl der Seiten

8

ISSN

0168-583X

Publikationsdatum

01.05.1995

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Kern- und Hochenergiephysik, Instrumentierung

Elektronische Version(en)

https://doi.org/10.1016/0168-583X(95)00259-6 (Zugang: Geschlossen)