Strain relaxation in tensile-strained Si_1-yC_y layers on Si(001)

authored by

H. J. Osten, D. Endisch, E. Bugiel, B. Dietrich, G. G. Fischer, Myeongcheol Kim, D. Krüger, P. Zaumseil

Abstract

We investigated in detail the strain relaxation behaviour of metastable tensile-strained Si_1-yC_y epilayers on Si(001) by comparing the layers before and after an annealing step using a variety of different diagnostic methods. The dominant strain-relieving mechanism is the formation of carbon-containing interstitial complexes and/or silicon carbide nanoparticles, similar to the behaviour of carbon in silicon under thermodynamical equilibrium conditions (concentrations below the solid bulk solubility limit). We did not observe any carbon out-diffusion. To grow material suitable for device applications, all carbon atoms should be incorporated substitutionally. There is only a very narrow temperature window for perfect epitaxial growth of such layers, limited on one side by the possible formation of interstitial carbon complexes and on the other side by the deterioration of epitaxial growth at low temperatures. The carbon concentration should not exceed a few per cent to avoid strain-driven precipitation.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)
Western University
SUNY Albany

Type

Article

Journal

Semiconductor Science and Technology

Volume

11

Pages

1678-1687

No. of pages

10

ISSN

0268-1242

Publication date

1996

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

Electronic version(s)

https://doi.org/10.1088/0268-1242/11/11/007 (Access: Closed)