Strain relaxation in tensile-strained Si_1-yC_y layers on Si(001)

verfasst von

H. J. Osten, D. Endisch, E. Bugiel, B. Dietrich, G. G. Fischer, Myeongcheol Kim, D. Krüger, P. Zaumseil

Abstract

We investigated in detail the strain relaxation behaviour of metastable tensile-strained Si_1-yC_y epilayers on Si(001) by comparing the layers before and after an annealing step using a variety of different diagnostic methods. The dominant strain-relieving mechanism is the formation of carbon-containing interstitial complexes and/or silicon carbide nanoparticles, similar to the behaviour of carbon in silicon under thermodynamical equilibrium conditions (concentrations below the solid bulk solubility limit). We did not observe any carbon out-diffusion. To grow material suitable for device applications, all carbon atoms should be incorporated substitutionally. There is only a very narrow temperature window for perfect epitaxial growth of such layers, limited on one side by the possible formation of interstitial carbon complexes and on the other side by the deterioration of epitaxial growth at low temperatures. The carbon concentration should not exceed a few per cent to avoid strain-driven precipitation.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)
Western University
SUNY Albany

Typ

Artikel

Journal

Semiconductor Science and Technology

Band

11

Seiten

1678-1687

Anzahl der Seiten

10

ISSN

0268-1242

Publikationsdatum

1996

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Elektrotechnik und Elektronik, Werkstoffchemie

Elektronische Version(en)

https://doi.org/10.1088/0268-1242/11/11/007 (Zugang: Geschlossen)