Magnetocapacitance study of the fractional-quantum-Hall effect

Quasiparticle charge and spin polarization

authored by

S. I. Dorozhkin, M. O. Dorokhova, R. J. Haug, K. Ploog

Abstract

By the method of capacitance spectroscopy and of magnetotransport we have investigated the v = 1/3 and 2/3 fractional-quantum-Hall-effect (FQHE) states in gated GaAs/AlGaAs heterojunctions with tuned electron areal density. Our experimental results confirm the theoretical prediction of the fractional quasiparticle charge e* = e/3 in the v = 1/3 FQHE state and of the existence of spin-aligned quasiholes and spin-reversed quasielectrons in the fully spin-polarized v = 2/3 FQHE state.

External Organisation(s)

RAS - Institute of Solid State Physics
Max Planck Institute for Solid State Research (MPI-FKF)
Paul-Drude-Institut für Festkörperelektronik (PDI)

Type

Article

Journal

Physica E: Low-Dimensional Systems and Nanostructures

Volume

1

Pages

59-61

No. of pages

3

ISSN

1386-9477

Publication date

19.01.1997

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Condensed Matter Physics

Electronic version(s)

https://doi.org/10.1016/S1386-9477(97)00011-8 (Access: Closed)