Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries

authored by

T. Schmidt, M. Tewordt, R. J. Haug, K. V. Klitzing, B. Schönherr, P. Grambow, A. Förster, H. Lüth

Abstract

Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)
Forschungszentrum Jülich

Type

Article

Journal

Applied physics letters

Volume

68

Pages

838-840

No. of pages

3

ISSN

0003-6951

Publication date

01.12.1996

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Electronic version(s)

https://doi.org/10.1063/1.116550 (Access: Unknown)