Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries

verfasst von

T. Schmidt, M. Tewordt, R. J. Haug, K. V. Klitzing, B. Schönherr, P. Grambow, A. Förster, H. Lüth

Abstract

Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.

Externe Organisation(en)

Max-Planck-Institut für Festkörperforschung
Forschungszentrum Jülich

Typ

Artikel

Journal

Applied physics letters

Band

68

Seiten

838-840

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

01.12.1996

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.116550 (Zugang: Unbekannt)