Transport spectroscopy in single-electron tunneling transistors

authored by

R. J. Haug, J. Weis, R. H. Blick, K. Von Klitzing, K. Eberl, K. Ploog

Abstract

Tunneling through quantum dots is determined by the interplay between charging effects and the discrete energy-level spectrum originating from the three-dimensional confinement. We have performed spectroscopic measurements of many-particle ground and excited states in a single quantum dot by studying the linear and nonlinear transport. The occupation of excited states can lead to the appearance of negative differential conductance and to a suppression of transport via the ground states of the system. In a double-quantum-dot system consisting of two quantum dots of different sizes the measured conductance through the system is influenced by the charging energies of the individual dots and the coupling between the two dots.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)
Paul-Drude-Institut für Festkörperelektronik (PDI)

Type

Article

Journal

NANOTECHNOLOGY

Volume

7

Pages

381-384

No. of pages

4

ISSN

0957-4484

Publication date

01.12.1996

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Bioengineering, General Chemistry, General Materials Science, Mechanics of Materials, Mechanical Engineering, Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1088/0957-4484/7/4/013 (Access: Unknown)