Transport spectroscopy in single-electron tunneling transistors

verfasst von
R. J. Haug, J. Weis, R. H. Blick, K. Von Klitzing, K. Eberl, K. Ploog
Abstract

Tunneling through quantum dots is determined by the interplay between charging effects and the discrete energy-level spectrum originating from the three-dimensional confinement. We have performed spectroscopic measurements of many-particle ground and excited states in a single quantum dot by studying the linear and nonlinear transport. The occupation of excited states can lead to the appearance of negative differential conductance and to a suppression of transport via the ground states of the system. In a double-quantum-dot system consisting of two quantum dots of different sizes the measured conductance through the system is influenced by the charging energies of the individual dots and the coupling between the two dots.

Externe Organisation(en)
Max-Planck-Institut für Festkörperforschung
Paul-Drude-Institut für Festkörperelektronik (PDI)
Typ
Artikel
Journal
NANOTECHNOLOGY
Band
7
Seiten
381-384
Anzahl der Seiten
4
ISSN
0957-4484
Publikationsdatum
01.12.1996
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Bioengineering, Allgemeine Chemie, Allgemeine Materialwissenschaften, Werkstoffmechanik, Maschinenbau, Elektrotechnik und Elektronik
Elektronische Version(en)
https://doi.org/10.1088/0957-4484/7/4/013 (Zugang: Unbekannt)