Electric-field domains in semiconductor superlattices

A novel system for tunneling between 2D systems

authored by

H. T. Grahn, R. J. Haug, W. Müller, K. Ploog

Abstract

The boundary between electric-field domains in semiconductor superlattices represents a tunneling barrier. While most of the superlattice is coupled resonantly the current through the superlattice is limited by nonresonant tunneling at the domain boundary. The emitter and collector are purely two dimensional and the system therefore acts as a model system for tunneling between 2D systems. For magnetic fields applied parallel to the layers the average current through the single barrier increases, in contrast to 3D and quasi-2D emitters.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)

Type

Article

Journal

Physical review letters

Volume

67

Pages

1618-1621

No. of pages

4

ISSN

0031-9007

Publication date

01.01.1991

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

General Physics and Astronomy

Electronic version(s)

https://doi.org/10.1103/PhysRevLett.67.1618 (Access: Unknown)