Electric-field domains in semiconductor superlattices

A novel system for tunneling between 2D systems

verfasst von

H. T. Grahn, R. J. Haug, W. Müller, K. Ploog

Abstract

The boundary between electric-field domains in semiconductor superlattices represents a tunneling barrier. While most of the superlattice is coupled resonantly the current through the superlattice is limited by nonresonant tunneling at the domain boundary. The emitter and collector are purely two dimensional and the system therefore acts as a model system for tunneling between 2D systems. For magnetic fields applied parallel to the layers the average current through the single barrier increases, in contrast to 3D and quasi-2D emitters.

Externe Organisation(en)

Max-Planck-Institut für Festkörperforschung

Typ

Artikel

Journal

Physical review letters

Band

67

Seiten

1618-1621

Anzahl der Seiten

4

ISSN

0031-9007

Publikationsdatum

01.01.1991

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Elektronische Version(en)

https://doi.org/10.1103/PhysRevLett.67.1618 (Zugang: Unbekannt)