Structural characterization of SinC δ layers embedded in a silicon matrix
- authored by
- S. Ruvimov, E. Bugiel, H. J. Osten
- Abstract
Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon-carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the SinC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Article
- Journal
- Journal of applied physics
- Volume
- 78
- Pages
- 2323-2327
- No. of pages
- 5
- ISSN
- 0021-8979
- Publication date
- 15.08.1995
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Physics and Astronomy
- Electronic version(s)
-
https://doi.org/10.1063/1.360149 (Access:
Closed)
