Structural characterization of Si_nC δ layers embedded in a silicon matrix

verfasst von

S. Ruvimov, E. Bugiel, H. J. Osten

Abstract

Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon-carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the Si_nC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Journal of applied physics

Band

78

Seiten

2323-2327

Anzahl der Seiten

5

ISSN

0021-8979

Publikationsdatum

15.08.1995

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Elektronische Version(en)

https://doi.org/10.1063/1.360149 (Zugang: Geschlossen)