Supersaturated carbon in silicon and silicon/germanium alloys
- authored by
- H. J. Osten
- Abstract
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Article
- Journal
- Materials Science and Engineering B
- Volume
- 36
- Pages
- 268-274
- No. of pages
- 7
- ISSN
- 0921-5107
- Publication date
- 01.1996
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Materials Science, Condensed Matter Physics, Mechanics of Materials, Mechanical Engineering
- Electronic version(s)
-
https://doi.org/10.1016/0921-5107(95)01272-9 (Access:
Closed)
