Supersaturated carbon in silicon and silicon/germanium alloys
- verfasst von
- H. J. Osten
- Abstract
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
- Externe Organisation(en)
-
Leibniz-Institut für innovative Mikroelektronik (IHP)
- Typ
- Artikel
- Journal
- Materials Science and Engineering B
- Band
- 36
- Seiten
- 268-274
- Anzahl der Seiten
- 7
- ISSN
- 0921-5107
- Publikationsdatum
- 01.1996
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Allgemeine Materialwissenschaften, Physik der kondensierten Materie, Werkstoffmechanik, Maschinenbau
- Elektronische Version(en)
-
https://doi.org/10.1016/0921-5107(95)01272-9 (Zugang:
Geschlossen)
