Single-electron transistors with quantum dots

authored by

R. J. Haug, M. Dilger, T. Schmidt, R. H. Blick, K. V. Klitzing, K. Eberl

Abstract

Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)

Type

Article

Journal

Physica B: Condensed Matter

Volume

227

Pages

82-86

No. of pages

5

ISSN

0921-4526

Publication date

09.1996

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1016/0921-4526(96)00356-0 (Access: Unknown)