Strain-stabilized structures on silicon grown with MBE
- authored by
- H. J. Osten, H. Rücker, M. Methfessel, E. Bugiel, S. Ruvimov, G. Lippert
- Abstract
Calculations predict that thin layers of certain ordered SinC (n ≥ 4) structures embedded in silicon are considerably more stable than isolated C impurities. These pseudomorphic layers (with carbon concentrations up to 20%) are thermodynamically forbidden. They can only exist due to strain-stabilization. Such layers were grown by molecular beam epitaxy and characterized with high resolution electron microscopy and X-ray photoelectron spectroscopy. The experimental results support the theoretical predictions. Carbon atoms deposited on silicon at moderate temperatures tend not to stay at the surface, but instead readily migrate into the crystal to form a narrow region with high carbon concentration. The energy barrier for this process is much smaller than that for diffusion in the bulk.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Article
- Journal
- Journal of crystal growth
- Volume
- 157
- Pages
- 405-409
- No. of pages
- 5
- ISSN
- 0022-0248
- Publication date
- 12.1995
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Condensed Matter Physics, Inorganic Chemistry, Materials Chemistry
- Electronic version(s)
-
https://doi.org/10.1016/0022-0248(95)00332-0 (Access:
Closed)
