Strain-stabilized structures on silicon grown with MBE

verfasst von

H. J. Osten, H. Rücker, M. Methfessel, E. Bugiel, S. Ruvimov, G. Lippert

Abstract

Calculations predict that thin layers of certain ordered Si_nC (n ≥ 4) structures embedded in silicon are considerably more stable than isolated C impurities. These pseudomorphic layers (with carbon concentrations up to 20%) are thermodynamically forbidden. They can only exist due to strain-stabilization. Such layers were grown by molecular beam epitaxy and characterized with high resolution electron microscopy and X-ray photoelectron spectroscopy. The experimental results support the theoretical predictions. Carbon atoms deposited on silicon at moderate temperatures tend not to stay at the surface, but instead readily migrate into the crystal to form a narrow region with high carbon concentration. The energy barrier for this process is much smaller than that for diffusion in the bulk.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Journal of crystal growth

Band

157

Seiten

405-409

Anzahl der Seiten

5

ISSN

0022-0248

Publikationsdatum

12.1995

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie

Elektronische Version(en)

https://doi.org/10.1016/0022-0248(95)00332-0 (Zugang: Geschlossen)