Self-organized growth of quantum dot-tunnel barrier systems
- authored by
- M. Dilger, K. Eberl, R. J. Haug, K. Von Klitzing
- Abstract
Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al0.33Ga0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.
- Organisation(s)
-
Institute of Solid State Physics
- External Organisation(s)
-
Max Planck Institute for Solid State Research (MPI-FKF)
- Type
- Article
- Journal
- Superlattices and microstructures
- Volume
- 21
- Pages
- 533-539
- No. of pages
- 7
- ISSN
- 0749-6036
- Publication date
- 06.1997
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Materials Science, Condensed Matter Physics, Electrical and Electronic Engineering
- Electronic version(s)
-
https://doi.org/10.1006/spmi.1996.0190 (Access:
Unknown)
