Self-organized growth of quantum dot-tunnel barrier systems
- verfasst von
- M. Dilger, K. Eberl, R. J. Haug, K. Von Klitzing
- Abstract
Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al0.33Ga0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.
- Organisationseinheit(en)
-
Institut für Festkörperphysik
- Externe Organisation(en)
-
Max-Planck-Institut für Festkörperforschung
- Typ
- Artikel
- Journal
- Superlattices and microstructures
- Band
- 21
- Seiten
- 533-539
- Anzahl der Seiten
- 7
- ISSN
- 0749-6036
- Publikationsdatum
- 06.1997
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Allgemeine Materialwissenschaften, Physik der kondensierten Materie, Elektrotechnik und Elektronik
- Elektronische Version(en)
-
https://doi.org/10.1006/spmi.1996.0190 (Zugang:
Unbekannt)
