Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si_1-yC_y on Si(001)

authored by

H. J. Osten, Myeongcheol Kim, K. Pressel, P. Zaumseil

Abstract

Molecular beam epitaxial growth of Si_1-yC_y alloys pseudomorphically strained on the (2 × 1) reconstructed Si(001) has been investigated as a function of growth conditions. An important question concerns the relation between substitutional and interstitial carbon incorporation, which has a large impact on electrical and optical properties of these layers. We show that the interstitial-to-substitutional carbon ratio is strongly influenced by the growth conditions, such as growth temperature and Si growth rate. Both reduction in growth temperature and increase of the overall growth rate lead to an increase in the substitutional-to-interstitial carbon ratio. However, these changes in growth conditions can also cause some deterioration in crystal quality. The carbon incorporation behavior is well described by first order kinetics.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

Journal of applied physics

Volume

80

Pages

6711-6715

No. of pages

5

ISSN

0021-8979

Publication date

15.12.1996

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

General Physics and Astronomy

Electronic version(s)

https://doi.org/10.1063/1.363797 (Access: Closed)