Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si_1-yC_y on Si(001)

verfasst von

H. J. Osten, Myeongcheol Kim, K. Pressel, P. Zaumseil

Abstract

Molecular beam epitaxial growth of Si_1-yC_y alloys pseudomorphically strained on the (2 × 1) reconstructed Si(001) has been investigated as a function of growth conditions. An important question concerns the relation between substitutional and interstitial carbon incorporation, which has a large impact on electrical and optical properties of these layers. We show that the interstitial-to-substitutional carbon ratio is strongly influenced by the growth conditions, such as growth temperature and Si growth rate. Both reduction in growth temperature and increase of the overall growth rate lead to an increase in the substitutional-to-interstitial carbon ratio. However, these changes in growth conditions can also cause some deterioration in crystal quality. The carbon incorporation behavior is well described by first order kinetics.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Journal of applied physics

Band

80

Seiten

6711-6715

Anzahl der Seiten

5

ISSN

0021-8979

Publikationsdatum

15.12.1996

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Elektronische Version(en)

https://doi.org/10.1063/1.363797 (Zugang: Geschlossen)