Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100)
- authored by
- H. J. Osten, E. Bugiel, J. Klatt
- Abstract
Smooth epitaxial 10 and 30 nm germanium layers have been grown on Si(100) by surfactant-controlled solid phase epitaxy. The layers were characterized by reflection high energy electron diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. By depositing one monolayer antimony on top of the amorphous germanium layer it was possible to crystallize the germanium directly into a smooth epitaxial structure without any island formation. The obtained low-defect layers are relaxed.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Article
- Journal
- Applied physics letters
- Volume
- 61
- Pages
- 1918-1920
- No. of pages
- 3
- ISSN
- 0003-6951
- Publication date
- 19.10.1992
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic version(s)
-
https://doi.org/10.1063/1.108363 (Access:
Open)
