Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100)

verfasst von

H. J. Osten, E. Bugiel, J. Klatt

Abstract

Smooth epitaxial 10 and 30 nm germanium layers have been grown on Si(100) by surfactant-controlled solid phase epitaxy. The layers were characterized by reflection high energy electron diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. By depositing one monolayer antimony on top of the amorphous germanium layer it was possible to crystallize the germanium directly into a smooth epitaxial structure without any island formation. The obtained low-defect layers are relaxed.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Applied physics letters

Band

61

Seiten

1918-1920

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

19.10.1992

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.108363 (Zugang: Offen)