Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures

authored by

T. Schmidt, M. Tewordt, R. J. Haug, K. Von Klitzing, A. Förster, H. Lüth

Abstract

Single-electron tunneling through laterally confined double-barrier heterostructures is studied as a function of the electron accumulation in the quantum dot. In the strong-charging case we observe a current-voltage staircase with smooth plateaus, whereas an intricate fine structure evolves on top of the plateaus under weak-charging conditions. Single-electron-tunneling spectroscopy in high magnetic fields is employed to demonstrate that both tunneling through excited quantum-dot levels and fluctuations of the local density of states in the emitter contribute to this fine structure. PACS numbers: 73.20.Dx, 73.40.Gk.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)
Deutsche Bank AG
Forschungszentrum Jülich

Type

Article

Journal

Solid-State Electronics

Volume

40

Pages

15-19

No. of pages

5

ISSN

0038-1101

Publication date

01.01.1996

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

Electronic version(s)

https://doi.org/10.1016/0038-1101(95)00205-7 (Access: Unknown)