Influence of carrier cooling on the emission dynamics of semiconductor microcavity lasers

authored by

M. Hilpert, Martin R. Hofmann, C. Ellmers, Michael Oestreich, H. C. Schneider, F. Jahnke, Stephan W. Koch, W. W. Rühle, H. D. Wolf, D. Bernklau, H. Riechert, H. Klann

Abstract

We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)
Philipps-Universität Marburg
Siemens AG

Type

Article

Journal

Physica Status Solidi (B) Basic Research

Volume

204

Pages

548-551

No. of pages

4

ISSN

0370-1972

Publication date

11.1997

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

Electronic version(s)

https://doi.org/10.1002/1521-3951(199711)204:1<548::AID-PSSB548>3.0.CO;2-B (Access: Unknown)