SiGeC materials
- authored by
- H. J. Osten
- Abstract
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si1-y-xGexCy layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Paper
- Pages
- 195-200
- No. of pages
- 6
- Publication date
- 1996
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Engineering
