SiGeC materials
- verfasst von
- H. J. Osten
- Abstract
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si1-y-xGexCy layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.
- Externe Organisation(en)
-
Leibniz-Institut für innovative Mikroelektronik (IHP)
- Typ
- Paper
- Seiten
- 195-200
- Anzahl der Seiten
- 6
- Publikationsdatum
- 1996
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Allgemeiner Maschinenbau
