Direct evidence of tunneling between edge states across a gate-induced potential barrier

authored by

A. J. Peck, S. J. Bending, J. Weis, R. J. Haug, K. Von Klitzing, K. Ploog

Abstract

We have studied tunneling in the plane of a two-dimensional electron gas across the imposed potential barrier beneath a very short gate. In quantizing magnetic fields the tunnel conductance shows sharp peaks as a function of applied bias, which vary nonmonotonically in position and amplitude as the field is increased, showing a clear switching behavior near integer filling factors. Our data show reasonable qualitative agreement with a theoretical single-particle model of tunneling between edge states and we propose that this is the origin of our peak structures.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)

Type

Article

Journal

Physical Review B

Volume

51

Pages

4711-4714

No. of pages

4

ISSN

0163-1829

Publication date

01.01.1995

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Condensed Matter Physics

Electronic version(s)

https://doi.org/10.1103/PhysRevB.51.4711 (Access: Unknown)