Direct evidence of tunneling between edge states across a gate-induced potential barrier

verfasst von

A. J. Peck, S. J. Bending, J. Weis, R. J. Haug, K. Von Klitzing, K. Ploog

Abstract

We have studied tunneling in the plane of a two-dimensional electron gas across the imposed potential barrier beneath a very short gate. In quantizing magnetic fields the tunnel conductance shows sharp peaks as a function of applied bias, which vary nonmonotonically in position and amplitude as the field is increased, showing a clear switching behavior near integer filling factors. Our data show reasonable qualitative agreement with a theoretical single-particle model of tunneling between edge states and we propose that this is the origin of our peak structures.

Externe Organisation(en)

Max-Planck-Institut für Festkörperforschung

Typ

Artikel

Journal

Physical Review B

Band

51

Seiten

4711-4714

Anzahl der Seiten

4

ISSN

0163-1829

Publikationsdatum

01.01.1995

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik der kondensierten Materie

Elektronische Version(en)

https://doi.org/10.1103/PhysRevB.51.4711 (Zugang: Unbekannt)