Comparison of SiGe and SiGe:C heterojunction bipolar transistors
- authored by
- D. Knoll, B. Heinemann, K. E. Ehwald, B. Tillack, P. Schley, H. J. Osten
- Abstract
We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Conference article
- Journal
- THIN SOLID FILMS
- Volume
- 369
- Pages
- 342-346
- No. of pages
- 5
- ISSN
- 0040-6090
- Publication date
- 03.07.2000
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Surfaces and Interfaces, Surfaces, Coatings and Films, Metals and Alloys, Materials Chemistry
- Electronic version(s)
-
https://doi.org/10.1016/S0040-6090(00)00866-X (Access:
Closed)
