Comparison of SiGe and SiGe:C heterojunction bipolar transistors
- verfasst von
- D. Knoll, B. Heinemann, K. E. Ehwald, B. Tillack, P. Schley, H. J. Osten
- Abstract
We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.
- Externe Organisation(en)
-
Leibniz-Institut für innovative Mikroelektronik (IHP)
- Typ
- Konferenzaufsatz in Fachzeitschrift
- Journal
- THIN SOLID FILMS
- Band
- 369
- Seiten
- 342-346
- Anzahl der Seiten
- 5
- ISSN
- 0040-6090
- Publikationsdatum
- 03.07.2000
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Oberflächen und Grenzflächen, Oberflächen, Beschichtungen und Folien, Metalle und Legierungen, Werkstoffchemie
- Elektronische Version(en)
-
https://doi.org/10.1016/S0040-6090(00)00866-X (Zugang:
Geschlossen)