Comparison of SiGe and SiGe:C heterojunction bipolar transistors

verfasst von
D. Knoll, B. Heinemann, K. E. Ehwald, B. Tillack, P. Schley, H. J. Osten
Abstract

We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( approximately 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.

Externe Organisation(en)
Leibniz-Institut für innovative Mikroelektronik (IHP)
Typ
Konferenzaufsatz in Fachzeitschrift
Journal
THIN SOLID FILMS
Band
369
Seiten
342-346
Anzahl der Seiten
5
ISSN
0040-6090
Publikationsdatum
03.07.2000
Publikationsstatus
Veröffentlicht
Peer-reviewed
Ja
ASJC Scopus Sachgebiete
Elektronische, optische und magnetische Materialien, Oberflächen und Grenzflächen, Oberflächen, Beschichtungen und Folien, Metalle und Legierungen, Werkstoffchemie
Elektronische Version(en)
https://doi.org/10.1016/S0040-6090(00)00866-X (Zugang: Geschlossen)