Ternary SiGeC alloys

Growth and properties of a new semiconducting material

authored by: H. Jörg Osten, Myeongcheol Kim, G. Lippert, P. Zaumseil
Abstract: The growth and properties of Si_1-yC_y and Si_1-x-yGe_xC_y alloys pseudomorphically strained on Si(001) will be critically reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated by molecular beam epitaxy and different chemical vapour deposition techniques. One of the most crucial questions is the relation between substitutional and interstitial carbon incorporation, which has a large impact on the electrical and optical properties of these layers. We will show that the interstitial to substitutional carbon ratio is strongly influenced by the chosen growth conditions, like growth temperature and Si growth rate. In addition, angle-resolved X-ray photoelectron spectroscopy measurements indicate a surface segregation of interstitial carbon-containing complexes (more significant for higher growth temperature). Substitutionally incorporated C atoms allow strain manipulation, including the growth of an inversely strained Si_1-x-yGe_xC_y layer. Local ordering effects due to atomic size differences and the growth on reconstructed surfaces, the mechanical and structural properties, and the influence of C atoms on band structure of Si and SiGe layers will be discussed.
External Organisation(s): Leibniz Institute for High Performance Microelectronics (IHP)
Type: Article
Journal: THIN SOLID FILMS
Volume: 294
Pages: 93-97
No. of pages: 5
ISSN: 0040-6090
Publication date: 15.02.1997
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electronic, Optical and Magnetic Materials, Surfaces and Interfaces, Surfaces, Coatings and Films, Metals and Alloys, Materials Chemistry
Electronic version(s): https://doi.org/10.1016/S0040-6090(96)09250-4 (Access: Closed)

BibTeX

@article{dd31d291c75f446b96520f4e52f75ec4,
title = "Ternary SiGeC alloys: Growth and properties of a new semiconducting material",
abstract = "The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be critically reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated by molecular beam epitaxy and different chemical vapour deposition techniques. One of the most crucial questions is the relation between substitutional and interstitial carbon incorporation, which has a large impact on the electrical and optical properties of these layers. We will show that the interstitial to substitutional carbon ratio is strongly influenced by the chosen growth conditions, like growth temperature and Si growth rate. In addition, angle-resolved X-ray photoelectron spectroscopy measurements indicate a surface segregation of interstitial carbon-containing complexes (more significant for higher growth temperature). Substitutionally incorporated C atoms allow strain manipulation, including the growth of an inversely strained Si1-x-yGexCy layer. Local ordering effects due to atomic size differences and the growth on reconstructed surfaces, the mechanical and structural properties, and the influence of C atoms on band structure of Si and SiGe layers will be discussed.",
keywords = "Alloys, Growth mechanism, Semiconductors, SiGeC",
author = "Osten, {H. J{\"o}rg} and Myeongcheol Kim and G. Lippert and P. Zaumseil",
year = "1997",
month = feb,
day = "15",
doi = "10.1016/S0040-6090(96)09250-4",
language = "English",
volume = "294",
pages = "93--97",
journal = "THIN SOLID FILMS",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",
}